IRF2807 hexfet ? power mosfet parameter typ. max. units r q jc junction-to-case CCC 0.65 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 75v r ds(on) = 13m w i d = 82a ? s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 82 ? i d @ t c = 100c continuous drain current, v gs @ 10v 58 a i dm pulsed drain current ? 280 p d @t c = 25c power dissipation 230 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v i ar avalanche current ? 43 a e ar repetitive avalanche energy ? 23 mj dv/dt peak diode recovery dv/dt ? 5.9 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) www.freescale.net.cn 1 / 7
s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 43a, v gs = 0v ? t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = 43a q rr reverse recovery charge CCC 410 610 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 82 ? 280 a ? starting t j = 25c, l = 370h r g = 25 w , i as = 43a, v gs =10v (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: ? i sd 43a, di/dt 300a/s, v dd v (br)dss , t j 175c ? pulse width 400s; duty cycle 2%. ? this is a typical value at device destruction and represents operation outside rated limits. ? this is a calculated value limited to t j = 175c . ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.074 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 13 m w v gs = 10v, i d = 43a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 38 CCC CCC s v ds = 50v, i d = 43a ? CCC CCC 25 a v ds = 75v, v gs = 0v CCC CCC 250 v ds = 60v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 160 i d = 43a q gs gate-to-source charge CCC CCC 29 nc v ds = 60v q gd gate-to-drain ("miller") charge CCC CCC 55 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 13 CCC v dd = 38v t r rise time CCC 64 CCC i d = 43a t d(off) turn-off delay time CCC 49 CCC r g = 2.5 w t f fall time CCC 48 CCC v gs = 10v, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 3820 CCC v gs = 0v c oss output capacitance CCC 610 CCC v ds = 25v c rss reverse transfer capacitance CCC 130 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ? CCC 1280 ? 340 ? mj i as = 50a, l = 370h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current IRF2807 www.freescale.net.cn 2 / 7
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 71a IRF2807 www.freescale.net.cn 3 / 7
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 43a v = 15v ds v = 37v ds v = 60v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec IRF2807 www.freescale.net.cn 4 / 7
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms IRF2807 www.freescale.net.cn 5 / 7
q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 18a 30a 43a r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v v gs IRF2807 www.freescale.net.cn 6 / 7
7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets IRF2807 www.freescale.net.cn 6 / 7
lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part marking information to-220ab package outline to-220ab dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a IRF2807 www.freescale.net.cn 7 / 7
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